金潮渊

个人简介：

金潮渊，浙江大学”百人计划”研究员、博士生导师、国家青年人才项目入选者、国家重点研发计划项目首席科学家。主要研究基于半导体量子点材料的集成光电芯片和光量子芯片，包括高速激光器、单光子源、全光调制器、微波光子器件等。他在国内外学术期刊上发表研究论文70余篇，以第一作者/通讯作者身份发表Nature Nanotechnology, APL, IEEE, OE, OL, PRB等一流学术期刊论文。半导体中自发发射过程的超快控制入选美国光学学会年度进展并登上专题封面（2014）。曾获得日本学术振兴会研究员（2008）、日本学术振兴会桥梁学者（2017）、英国谢菲尔德大学校长研究员（长聘讲师，2015）、浙江省特聘专家（2018）等荣誉称号。现担任浙江大学竺可桢学院专业导师和“新时代人才培养战略伙伴中学”主讲专家。

近年来，作为项目首席科学家主持国家重点研发计划项目“面向规模集成的高效硅基光波导放大器和激光器”，发展硅基有源器件的芯片集成技术；主持国家自然科学基金面上项目2项，发展基于光子晶体微腔的激光器技术；作为项目骨干成员深度参加欧盟Horizon 2020 FET项目和英国EPSRC标准项目各1项，通过国际合作推动基于激光干涉分子束外延的量子点阵列外延技术。与国内多家企业开展产学研合作，有力地促进了国内光电子核心芯片制造的关键技术水平，荣获中国产学研合作创新奖（2022）。

个人履历：

时间学校职位主要研究方向
1996 – 2000南京大学物理学（微电子）本科
2000 – 2003中国科学院半导体研究所微电子学与固体电子学硕士半导体光放大器
2004 – 2008英国谢菲尔德大学电子与电气工程博士量子点激光器
2008 – 2010日本神户大学日本学术振兴会研究员垂直腔光开关/光调制器
2010 – 2013荷兰埃因霍温理工大学博士后微腔单光子源
2013 – 2015荷兰EFFECT Photonics公司资深科学家100/400G光子集成芯片
2015中国科学院半导体研究所研究员微腔激光器
2015 – 2017英国谢菲尔德大学校长研究员超快光子学
2017 至今浙江大学百人计划研究员超快光子学

浙大主页：https://person.zju.edu.cn/uphotonics

论文会议报告专著
2007
Effects of photon and thermal coupling mechanisms on the characteristics of self-assembled InAs/GaAs quantum dot lasers

C.Y. Jin, H.Y. Liu, K.M. Groom, Q. Jiang, M. Hopkinson, T.J. Badcock, R.J. Royce, D.J. Mowbray
Phys. Rev. B vol. 76, pp. 085315(1-12), 2007.

Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer

C.Y. Jin, H.Y. Liu, S.Y. Zhang, Q. Jiang, S.L. Liew, M. Hopkinson, T.J. Badcock, E. Nabavi, D.J. Mowbray
Appl. Phys. Lett. vol. 91, pp. 021102(1-3), 2007.

Reduced temperature sensitivity of the lasing wavelength in near-1.3-μm InAs/GaAs quantum-dot laser with a stepped composition strain-reducing layer

H.Y. Liu, T.J. Badcock, C.Y. Jin, E. Nabavi, K.M. Groom, M. Hopkinson, D.J. Mowbray
Electron. Lett. vol. 43, pp. 670-672, 2007.

2006
Observation and modeling of a room-temperature negative characteristic temperature 1.3 μm p-type modulation doped quantum dot laser

C.Y. Jin, T.J. Badcock, H.Y. Liu, K.M. Groom, R.J. Royce, D.J. Mowbray, M. Hopkinson
IEEE J. Quantum Electron. vol. 42, pp. 1259-1265, 2006.

1.3 µm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

T.J. Badcock, H.Y. Liu, K.M. Groom, C.Y. Jin, M. Gutiérrez, M. Hopkinson, D.J. Mowbray, M.S. Skolnick
Electron. Lett. vol. 42, pp. 922-923, 2006.

High-performance 1.3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature

H.Y. Liu, T.J. Badcock, K.M. Groom, M. Hopkinson, M. Gutierrez, D.T. Childs, C.Y. Jin, R.A. Hogg, I.R. Sellers, D.J. Mowbray, M.S. Skolnick, R. Beanland, D.J. Robbins
Proceedings of SPIE, vol. 6184, p. 18417, 2006.

Dilute nitride-based 1.3-μm high performance lasers

P. Navaretti, C.Y. Jin, H.Y. Liu, R. Airey, M. Hopkinson
Proceedings of SPIE, vol. 6184, p. D1840, 2006.

High-performance 1.3μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature

C.Y. Jin, H.Y. Liu, T.J. Badcock, K.M. Groom, M. Gutiérrez, R. Royce, M. Hopkinson, D.J. Mowbray
IEE Proc. Optoelectronics vol. 153, pp. 280-283, 2006.

1.34 μm GaInNAs quantum well lasers with low room-temperature threshold current density

M. Hopkinson, C.Y. Jin, H.Y. Liu, P. Navaretti, R. Airey
Electron. Lett. vol. 42, pp. 923-924, 2006.

Effects of growth temperature on the structural and optical properties of 1.6 µm GaInNAs/GaAs multiple quantum wells

H.Y. Liu, C.M. Tey, C.Y. Jin, S.L. Liew, P. Navaretti, M. Hopkinson, A.G. Cullis
Appl. Phys. Lett. vol. 88, pp. 191907-191909, 2006.

p-doped 1.3 µm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency

H.Y. Liu, S.L. Liew, T. Badcock, D.J. Mowbray, M.S. Skolnick, S.K. Ray, T.L. Choi, K.M. Groom, B. Stevens, F. Hasbullah, C.Y. Jin, M. Hopkinson, R.A. Hogg
Appl. Phys. Lett. vol. 89, pp. 073113-073115, 2006.

2005
Numerical and theoretical analysis of the crosstalk in linear optical amplifiers

C.Y. Jin, Y.Z. Huang, L.J. Yu, S.L. Deng
IEEE J. Quantum Electron. vol. 41, pp. 636-641, 2005.

Numerical analysis of probe light energy in cross-gain modulation of SOA

C.Liu, C.Y. Jin, Y.Z. Huang, N.H. Zhu
J. Semiconductors (China) vol. 26, pp. 812-815, 2005.

2004
Detailed model and investigation of gain saturation and carrier spatial hole burning for semiconductor optical amplifier with gain clamping by a vertical laser field

C.Y. Jin, Y.Z. Huang, L.J. Yu, S.L. Deng
IEEE J. Quantum Electron. vol. 40, pp. 513-518, 2004.

Wavelength conversion using gain-clamped semiconductor optical amplifier

C.Y. Jin, Y.Z. Huang
Semiconductor Optoelectronics (China) vol. 25, pp. 29-31, 2004.