1. Qualification：
PhD(semiconductor material and device), University of Sheffield, 2018.
Msc(photonics), Royal Institute of Technology, 2013.
2. Research interests:
- Method development for analytical transmission electron microscopy and photoluminescence spectroscopy, including valence electron energy loss spectroscopy (VEELS), energy dispersive X ray spectroscopy (EDXS) and in-situ photoluminescence spectroscopy.
- Characterization of surface and interface carrier transportation based on electron beam induced current (EBIC).
- Characterization of III-nitrides compound semiconductor nanostructure, such as InGaN or AlGaN multiple quantum wells and nanowire.
- High energy electron beam damage on III-nitride semiconductors.
2021
Directional charge transportation and Rayleigh scattering for the optimal in-band quantum yield of a composite semiconductor nano-photocatalyst
X.Y. Wang, W.Y. Hu, Y.Q, Y.H, X.Q. Wang, M. Xu, J. Ma, F. Miao, X.D. Cui, C.Y. Jin, P. Ruterana
Catalysis Science & Technology
2019
A bi-layer buffer system AlN/Al1−xInxN to enable the growth of high crystal quality Al0.36In0.64N thin films on Si (111)
W. Lu, X.Y. Wang, Y. Ma, S. Grasso, M. Xu
CrystEngComm, vol. 21, pp. 5211-5215, 2019.
2018
Self-consistent absorption correction for quantifying very noisy X-ray maps: group III nitride nanowire as an example
X.Y. Wang, J. Bai, T. Walther
Journal of Microscopy, vol. 272, issue. 2, pp. 111-122, 2018.
2017
Effective absorption correction for energy dispersive X-ray spectroscopy in a scanning transmission electron microscope: analyzing the indium distribution in rough samples of InGaN alloy layers
X.Y. Wang, M-P. Chauvat, P. Ruterana, T. Walther
Journal of Microscopy, vol. 268, pp. 248-253, 2017.
Study of phase separation in an InGaN alloy by electron energy loss spectroscopy in an aberration corrected monochromated scanning transmission electron microscope
T. Walther, X.Y. Wang, V.C. Angadi, P. Ruterana, P. Longo, T. Aoki
Journal of Materials Research, vol. 32, issue. 5, pp. 983-995, 2017.
2016
Investigation of phase separation in InGaN alloys by plasmon loss spectroscopy in a TEM
X.Y. Wang, M-P. Chauvat, P. Ruterana, T. Walther
MRS Advances, vol. 1, issue. 40, pp. 2749-2756, 2016.
Self-consistent method for quantifying indium content from X-ray spectra of thick compound semiconductor specimens in a transmission electron microscope
T. Walther, X.Y. Wang
Journal of Microscopy, vol. 262, issue. 2, pp. 151-156, 2016.
2015
Combination of electron energy-loss spectroscopy and energy-dispersive X-ray spectroscopy to determine indium concentration in InGaN thin film structures
X.Y. Wang, M-P Chauvat, P. Ruternana, T. Walther
Semiconductor Science and Technology, vol. 30, issue. 11, 114011, 2015.
Self-consistent absorption correction for quantitative energy-dispersive X-ray spectroscopy of InGaN layers in analytical transmission electron microscopy
T. Walther, X.Y. Wang
Journal of Physics: Conference Series, vol. 644, issue.1, 012006, 2015.