Biography
Prof Chaoyuan Jin received Bachelor degree in Physics from Nanjing University (China), M.Sc. degree in Microelectronics from Institute of Semiconductors, Chinese Academy of Sciences (China), and Ph.D. degree in Electronic Engineering from University of Sheffield (UK). He was awarded a JSPS Fellowship and worked on quantum dot switches at Kobe University (Japan). In 2010, he joined Eindhoven University of Technology (Netherlands) working on ultrafast control of cavity quantum electrodynamics based on single quantum dots in photonic crystal cavities. He joined EFFECT Photonics B.V in 2013. In his role as a Senior Photonics Scientist, he developed high-speed optical transceivers for short-reach optical communications based on generic photonic integration technologies. In 2015, He was awarded a Vice-Chancellor’s Fellowship, working as a Lecturer developing research programs on ultrafast photonic devices at the Department of Electronic and Electrical Engineering, University of Sheffield (UK). He is now working at Zhejiang University (China) as a Hundred Talents Professor. His current research focuses on nanophotonic integration, quantum materials, nonlinear optics and optical computation.
2007
Effects of photon and thermal coupling mechanisms on the characteristics of self-assembled InAs/GaAs quantum dot lasers
C.Y. Jin, H.Y. Liu, K.M. Groom, Q. Jiang, M. Hopkinson, T.J. Badcock, R.J. Royce, D.J. Mowbray
Phys. Rev. B vol. 76, pp. 085315(1-12), 2007.
Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer
C.Y. Jin, H.Y. Liu, S.Y. Zhang, Q. Jiang, S.L. Liew, M. Hopkinson, T.J. Badcock, E. Nabavi, D.J. Mowbray
Appl. Phys. Lett. vol. 91, pp. 021102(1-3), 2007.
Reduced temperature sensitivity of the lasing wavelength in near-1.3-μm InAs/GaAs quantum-dot laser with a stepped composition strain-reducing layer
H.Y. Liu, T.J. Badcock, C.Y. Jin, E. Nabavi, K.M. Groom, M. Hopkinson, D.J. Mowbray
Electron. Lett. vol. 43, pp. 670-672, 2007.
2006
Observation and modeling of a room-temperature negative characteristic temperature 1.3 μm p-type modulation doped quantum dot laser
C.Y. Jin, T.J. Badcock, H.Y. Liu, K.M. Groom, R.J. Royce, D.J. Mowbray, M. Hopkinson
IEEE J. Quantum Electron. vol. 42, pp. 1259-1265, 2006.
1.3 µm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature
T.J. Badcock, H.Y. Liu, K.M. Groom, C.Y. Jin, M. Gutiérrez, M. Hopkinson, D.J. Mowbray, M.S. Skolnick
Electron. Lett. vol. 42, pp. 922-923, 2006.
High-performance 1.3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature
H.Y. Liu, T.J. Badcock, K.M. Groom, M. Hopkinson, M. Gutierrez, D.T. Childs, C.Y. Jin, R.A. Hogg, I.R. Sellers, D.J. Mowbray, M.S. Skolnick, R. Beanland, D.J. Robbins
Proceedings of SPIE, vol. 6184, p. 18417, 2006.
Dilute nitride-based 1.3-μm high performance lasers
P. Navaretti, C.Y. Jin, H.Y. Liu, R. Airey, M. Hopkinson
Proceedings of SPIE, vol. 6184, p. D1840, 2006.
High-performance 1.3μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature
C.Y. Jin, H.Y. Liu, T.J. Badcock, K.M. Groom, M. Gutiérrez, R. Royce, M. Hopkinson, D.J. Mowbray
IEE Proc. Optoelectronics vol. 153, pp. 280-283, 2006.
1.34 μm GaInNAs quantum well lasers with low room-temperature threshold current density
M. Hopkinson, C.Y. Jin, H.Y. Liu, P. Navaretti, R. Airey
Electron. Lett. vol. 42, pp. 923-924, 2006.
Effects of growth temperature on the structural and optical properties of 1.6 µm GaInNAs/GaAs multiple quantum wells
H.Y. Liu, C.M. Tey, C.Y. Jin, S.L. Liew, P. Navaretti, M. Hopkinson, A.G. Cullis
Appl. Phys. Lett. vol. 88, pp. 191907-191909, 2006.
p-doped 1.3 µm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency
H.Y. Liu, S.L. Liew, T. Badcock, D.J. Mowbray, M.S. Skolnick, S.K. Ray, T.L. Choi, K.M. Groom, B. Stevens, F. Hasbullah, C.Y. Jin, M. Hopkinson, R.A. Hogg
Appl. Phys. Lett. vol. 89, pp. 073113-073115, 2006.
2005
Numerical and theoretical analysis of the crosstalk in linear optical amplifiers
C.Y. Jin, Y.Z. Huang, L.J. Yu, S.L. Deng
IEEE J. Quantum Electron. vol. 41, pp. 636-641, 2005.
Numerical analysis of probe light energy in cross-gain modulation of SOA
C.Liu, C.Y. Jin, Y.Z. Huang, N.H. Zhu
J. Semiconductors (China) vol. 26, pp. 812-815, 2005.
2004
Detailed model and investigation of gain saturation and carrier spatial hole burning for semiconductor optical amplifier with gain clamping by a vertical laser field
C.Y. Jin, Y.Z. Huang, L.J. Yu, S.L. Deng
IEEE J. Quantum Electron. vol. 40, pp. 513-518, 2004.
Wavelength conversion using gain-clamped semiconductor optical amplifier
C.Y. Jin, Y.Z. Huang
Semiconductor Optoelectronics (China) vol. 25, pp. 29-31, 2004.