Biography
Prof Chaoyuan Jin received Bachelor degree in Physics from Nanjing University (China), M.Sc. degree in Microelectronics from Institute of Semiconductors, Chinese Academy of Sciences (China), and Ph.D. degree in Electronic Engineering from University of Sheffield (UK). He was awarded a JSPS Fellowship and worked on quantum dot switches at Kobe University (Japan). In 2010, he joined Eindhoven University of Technology (Netherlands) working on ultrafast control of cavity quantum electrodynamics based on single quantum dots in photonic crystal cavities. He joined EFFECT Photonics B.V in 2013. In his role as a Senior Photonics Scientist, he developed high-speed optical transceivers for short-reach optical communications based on generic photonic integration technologies. In 2015, He was awarded a Vice-Chancellor’s Fellowship, working as a Lecturer developing research programs on ultrafast photonic devices at the Department of Electronic and Electrical Engineering, University of Sheffield (UK). He is now working at Zhejiang University (China) as a Hundred Talents Professor. His current research focuses on nanophotonic integration, quantum materials, nonlinear optics and optical computation.
2007
Photon coupling model for the negative T0 in self-assembled quantum-dot lasers
C.Y. Jin, H.Y. Liu, K.M. Groom, M. Hopkinson, T.J. Badcock, R.J. Royce, D.J. Mowbray
One day quantum dot meeting, University of Nottingham, Nottingham, UK, 2007.
2006
High performance 1.34-μm GaInNAs quantum well lasers with quaternary barrier layers
C.Y. Jin, P. Navaretti, H.Y. Liu, R. Airey, M. Hopkinson
UK Compound Semiconductors 2006, Sheffield, UK, 2006.
Auger Recombination is NOT necessary to explain the temperature dependence of threshold in p-doped quantum dot lasers
P.M. Smowton, I.C. Sandall, J.D. Thomson, T. Badcock, D.J. Mowbray, C.Y. Jin, H.Y. Liu, M. Hopkinson
The 20th international semiconductor laser conference (ISLC), Hawaii, USA, 2006. (Invited)
High-performance 1.3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature
H.Y. Liu, T.J. Badcock, K.M. Groom, M. Hopkinson, M. Gutierrez, D.T. Childs, C.Y. Jin, R.A. Hogg, I.R. Sellers, D.J. Mowbray, M.S. Skolnick, R. Beanland, D.J. Robbins
Semiconductor Lasers and Laser Dynamics (SPIE), Bellingham, WA, USA, 2006. (Invited)
Dilute nitride-based 1.3-μm high performance lasers
P. Navaretti, C.Y. Jin, H.Y. Liu, R. Airey, M. Hopkinson
Semiconductor Lasers and Laser Dynamics (SPIE), Bellingham, WA, USA, 2006. (Invited)
0000
Laser interference for nanomaterial epitaxy and the manipulation of photonic devices
C.Y. Jin
Smart China Expo, Chongqing, China, 2020 (Invited Speaker)
In-situ Laser Interference for Site-Controlled Quantum Dot Epitaxy and Microcavity Photonic Devices
C.Y. Jin, Y.R. Wang, L. Wang, X.T. Cheng, X. Lin, F. Liu, M. Hopkinson
IEEE The 9th International Conference on Information, Communication and Networks (ICICN), Xi’an, China, 2021 (Invited Speaker)
In-situ laser interference for the positioning of epitaxial quantum dots and manipulation of microcavity lasers
C.Y. Jin, Y.R. Wang, L. Wang, X.T. Cheng, X. Lin, F. Liu, M. Hopkinson
Conference on Molecular Beam Epitaxy, Liyang, China, 2021 (Session Chair and Invited Speaker)
In-situ laser interference for the positioning of epitaxial quantum dots and manipulation of microcavity lasers
C.Y. Jin
International Forum on Advanced Materials, Ningbo, China, 2021 (Invited Speaker)