In 2022,Huiwen Deng published a research paper titled “The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers” in Journal of Physical D.

This paper presents a study on the effect of the direct Si doping technique on high-density InAs/GaAs QDs grown on native substrates. Considering the proper doping methods, high-performance InAs/GaAs QD lasers with unintentional doped, p-type modulation-doped and n-type doped active regions have been demonstrated, revealing the impacts of dopants. The applied Si dopants can reduce the threshold current density of lasers, narrow the near field lasing spot while accelerating the lasing mode switch with a short cavity at a high operating temperature. In contrast, the Be dopants can promote high-temperature performance at the expense of increasing the threshold current density.

文章链接：https://iopscience.iop.org/article/10.1088/1361-6463/ac55c4/meta